摘要
This paper investigated the temperature dependence of the cryogenic small-signal ac performances of multi-finger partially depleted（PD） silicon-on-insulator（SOI） metal oxide semiconductor field effect transistors（MOSFETs）,with T-gate body contact（TB） structure.The measurement results show that the cut-off frequency increases from 78 GHz at 300 K to 120 GHz at 77 K and the maximum oscillation frequency increases from 54 GHz at 300 K to 80 GHz at 77 K,and these are mainly due to the effect of negative temperature dependence of threshold voltage and transconductance.By using a simple equivalent circuit model,the temperature-dependent small-signal parameters are discussed in detail.The understanding of cryogenic small-signal performance is beneficial to develop the PD SOI MOSFETs integrated circuits for ultra-low temperature applications.
This paper investigated the temperature dependence of the cryogenic small-signal ac performances of multi-finger partially depleted（PD） silicon-on-insulator（SOI） metal oxide semiconductor field effect transistors（MOSFETs）,with T-gate body contact（TB） structure.The measurement results show that the cut-off frequency increases from 78 GHz at 300 K to 120 GHz at 77 K and the maximum oscillation frequency increases from 54 GHz at 300 K to 80 GHz at 77 K,and these are mainly due to the effect of negative temperature dependence of threshold voltage and transconductance.By using a simple equivalent circuit model,the temperature-dependent small-signal parameters are discussed in detail.The understanding of cryogenic small-signal performance is beneficial to develop the PD SOI MOSFETs integrated circuits for ultra-low temperature applications.
基金
Project supported by the National Natural Science Foundation of China(No.61331006)
the National Defense Pre-Research Foundation of China(No.9140A11040114DZ04152)
