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A 10-bit 110 MHz SAR ADC with asynchronous trimming in 65-nm CMOS

A 10-bit 110 MHz SAR ADC with asynchronous trimming in 65-nm CMOS
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摘要 A 10-bit 110 MHz SAR ADC with asynchronous trimming is presented.In this paper,a high linearity sampling switch is used to produce a constant parasitical barrier capacitance which would not change with the range of input signals.As a result,the linearity of the SAR ADC will increase with high linearity sampled signals.Farther more,a high-speed and low-power dynamic comparator is proposed which would reduce the comparison time and save power consumption at the same time compared to existing technology.Additionally,the proposed comparator provides a better performance with the decreasing of power supply.Moreover,a highspeed successive approximation register is exhibited to speed up the conversion time and will reduce about 50%register delay.Lastly,an asynchronous trimming method is provided to make the capacitive-D AC settle up completely instead of using the redundant cycle which would prolong the whole conversion period.This SAR ADC is implemented in 65-nm CMOS technology the core occupies an active area of only 0.025 mm-2 and consumes 1.8 mW.The SAR ADC achieves SFDR 〉 68 dB and SNDR 〉 57 dB,resulting in the FOM of 28 f J/conversion-step.From the test results,the presented SAR ADC provides a better FOM compared to previous research and is suitable for a kind of ADC IP in the design SOC. A 10-bit 110 MHz SAR ADC with asynchronous trimming is presented.In this paper,a high linearity sampling switch is used to produce a constant parasitical barrier capacitance which would not change with the range of input signals.As a result,the linearity of the SAR ADC will increase with high linearity sampled signals.Farther more,a high-speed and low-power dynamic comparator is proposed which would reduce the comparison time and save power consumption at the same time compared to existing technology.Additionally,the proposed comparator provides a better performance with the decreasing of power supply.Moreover,a highspeed successive approximation register is exhibited to speed up the conversion time and will reduce about 50%register delay.Lastly,an asynchronous trimming method is provided to make the capacitive-D AC settle up completely instead of using the redundant cycle which would prolong the whole conversion period.This SAR ADC is implemented in 65-nm CMOS technology the core occupies an active area of only 0.025 mm-2 and consumes 1.8 mW.The SAR ADC achieves SFDR 〉 68 dB and SNDR 〉 57 dB,resulting in the FOM of 28 f J/conversion-step.From the test results,the presented SAR ADC provides a better FOM compared to previous research and is suitable for a kind of ADC IP in the design SOC.
出处 《Journal of Semiconductors》 EI CAS CSCD 2017年第4期94-102,共9页 半导体学报(英文版)
基金 Project supported by the Science and Technology on Analog Integrated Circuit Laboratory(No.9140C090105140C09041)
关键词 analog-to-digital converter asynchronous trimming high-speed successive approximation register analog-to-digital converter asynchronous trimming high-speed successive approximation register
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