辛基酚的碳化硅@膨胀石墨修饰电极法检测

Detection of Octylphenolusing with Silicon Carbide @ Expanded Graphite Modified Electrodes

采用气相沉积法在膨胀石墨(EG)层片间生长碳化硅(SiC)晶须,制备出复合材料碳化硅@膨胀石墨(SiC@EG),并通过改变气相沉积的温度(分别为1 200℃、1 300℃、1 400℃)制备出不同形貌的SiC@EG.所得材料用扫描电镜和循环伏安法及交流阻抗技术进行表征,结果表明1 300℃下制得的SiC@EG具有较好的电化学性能,将其作为新型修饰电极材料应用于对酚类环境激素的检测,研究了辛基酚在SiC@EG修饰电极上的电化学行为.通过考察辛基酚在SiC@EG修饰电极上氧化行为的影响因素,对实验条件进行了优化.在最优条件下,辛基酚的氧化峰电流和浓度在0.1μmol/L^10μmol/L范围内呈现良好的线性关系,检测限达35 nmol/L.

The composite materials of silicon carbide @ expanded graphite（SiC@EG） were prepared through the grown of Silicon carbide between the expanded graphite layers by vapor deposition. Different morphologies of SiC @ EG were developed by changing the temperature of vapor deposition from 1 200 ℃, 1 300 ℃ to 1 400 ℃, respectively, and they were characterized by scanning electron microscopy, cyclic voltammetry and electrochemical impedance spectroscopy. The SiC @ EG prepared at 1 300 ℃ shows the best electrochemical property, which was used a novel modified electrode material for the detection of phenolic environmental hormones, and the electrochemical behavior of octylphenol on SiC @ EG modified electrode was studied. The experimental conditions were optimized by investigating the effect of octylphenol oxidation on SiC @ EG modified electrode. Under the optimal conditions, the oxidation peak current and the concentration of octylphenol show a favorable linearity over the range of 0.1 μmol / L-10 μmol / L with the detection limit of 35 nmol / L.