摘要
通过对比MEMS各向异性腐蚀中硅材料表现出的各类缺陷,研究硅材料性能对腐蚀工艺的影响。研究中发现,硅中原生缺陷是影响腐蚀效果的重要因素,而原生缺陷与晶体初始氧含量密切相关。同时,掺杂原子会造成晶格畸变,继而导致腐蚀缺陷的产生。
The Properties of Silicon substrates was researched by the comparison of defects in the wet anisotropic etching.The intrinsic point defects in silicon which has been proved to be related to oxygen content was found to have an effect on processing.The doped atoms can cause lattice distortion,which can lead to the formation of etching defects.
出处
《电子工业专用设备》
2017年第2期4-6,15,共4页
Equipment for Electronic Products Manufacturing
关键词
硅
各向异性
湿法腐蚀
缺陷
Silicon
Anisotropic
Wet etching
Defects
