S波段GaN微波功率器件的研制

Development of S-Band Microwave Power Devices Using GaN HEMTs

简要介绍了第3代新型半导体材料GaN的特点和优势,基于Agilent ADS微波仿真软件设计并实现了一款工作于S波段基于GaN的高效超宽带微波功率器件。测试结果表明,该器件适用于2.7 GHz^3.5 GHz的超宽带,连续波和脉冲制式均可工作,在饱和状态下,输出功率大于15 W,增益达到13 d B,漏极效率超过45%,并在管壳内部实现了匹配和偏置电路,对GaN MOSFET微波功率器件小型化、超宽带、高增益和高效率的优异性能得以验证和实现。

The features and ascendancy of the new semiconductor materials of third generation are briefly introduced and the design and implementation of a kind of S-band microwave power device accomplished using GaN HEMTS with ultra-wideband and high-efficiency based on microwave simulation software Agilent ADS. The test results show that this device works at both continuous wave and pulse signal mode in the range of 2.7 GHz - 3.5 GHz. The saturated output power is over 15 W,gain over 13 dB and drain efficiency over 45%. In addition,the matching and bias circuits are placed in the device. It verifies and implements the miniaturization, ultra-wideband, high gain and high-efficiency of GaN MOSFET microwave power devices.