GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面（英文）

Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates

系统地研究了随着GaSb薄膜生长温度的降低,Sb/Ga(V/III)比的变化对薄膜低缺陷表面质量的影响.为了获得良好表面形貌的GaSb外延层,生长温度与V/III比均需要同时降低.当Sb源裂解温度为900℃时,生长得到低缺陷表面的低温GaS b薄膜的最佳生长条件是生长温度为在再构温度的基础上加60℃且V/III比为7.1.

The influence on the low-defect surface of GaSb thin-film material by the ratio of Sb to Ga （V/III） a- long with the reducing of the growth temperature was investigated systematically. In order to obtain a good surface morphology of the GaSh epitaxial layer with low defect, both of the growth temperature and the V/III ratio should be reduced at the same time. The optimal growth conditions of Low-temperature GaSb thin films are that the growth temperature is Tc ＋60℃ and the V/III ratio is about 7.1 when Sh cracker temperature is 900℃.