摘要
通过交流电导法,对经过不同时间N_2O快速热处理(RTP)的MOS电容进行界面特性和辐照特性研究。通过电导电压曲线,分析N_2O RTP对Si-SiO_2界面陷阱电荷和氧化物陷阱电荷造成的影响。结论表明,MOS电容的Si-SiO_2界面陷阱密度随N_2O快速热处理时间先增加再降低;零偏压总剂量辐照使氧化层陷阱电荷显著增加,而Si-SiO_2界面陷阱电荷轻微减少。
By changing the times of nitridation and reoxidation in rapid thermal processing, the interface state properties and radiation hardness properties of MOS capacitors with N2O-nitrided gate oxide had been investigated using conductance-frequency methods. Conductance voltage curves （GV） had been utilized to analyze the effects of N2O RTP on Si-SiO2 interface trapped charge and oxide trapped charge, while previous articles which analyzed the effect of interface states were through capacitance voltage curves （CV）. The results showed that the Si-SiO2 interface trap density of MOS capacitors increased first and then decreased with increased rapid thermal processing time of N2O gas. In addition, after the total dose radiation with zero gate bias, the oxide trapped charge increased significantly and the Si-SiO2 interface trapped charge decreased slightly.
作者
杨尊松
王立新
肖超
宋李梅
罗小梦
李彬鸿
陆江
孙博韬
YANG Zunsong WANG Lixin XIAO Chao SONG Limei LUO Xiaomeng LI Binhong LU Jiang SUN Botao(IMECAS, Beijing 100029, P. R. China Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China University of Chinese Academy of Sciences, Beijing 100029, P. R. China)
出处
《微电子学》
CSCD
北大核心
2017年第2期250-253,共4页
Microelectronics
基金
国家自然科学基金资助项目(61404169
61404161)
关键词
Si-SiO2界面
电导法
界面特性
辐照特性
Si-SiO2
interface
Conductance-frequency method
Interface property
Radiation property
