一种具有浮空P型埋层的新型FS-IGBT

A Novel FS-IGBT with a Floating P-type Layer

提出了一种在阳极引入浮空P型埋层的新型场截止绝缘栅晶体管(FS-IGBT)。结合超结与阳极短路的思想,在相同仿真条件下,与传统FS-IGBT相比,新结构的击穿电压提高了13.9%。当通态电流密度为150A/cm^2时,新结构的优化压降增量小于9%,关断时间比传统结构降低了60%以上,并且工作时无负阻现象,实现了导通压降与关断功耗的良好折中。

A novel FS-IGBT with a floating P-type layer （FPL） was introduced at the anode portion. It incorporated the super junction and the shorted anode theory. At the same simulation condition, the proposed FS- IGBT＇ s breakdown voltage was 13.9%0 higher than that of the conventional one. Its optimized forward drop increment was less than 9%, and the turn off time was decreased by more than 60% under a current density of 150 A/cm^2. Additionally, there was no snapback observed. As a result, the proposed FS-IGBT presented a better trade-off between the on-state voltage drop and the turnoff power loss.