真空热蒸发法制备SnS/In_2S_3异质结及退火温度对其整流特性影响

SnS/In_2S_3 Heterojunctions Prepared by the Vacuum Thermal Evaporation and the Effects of Annealing Temperature on the Rectification Characteristics of the Divices

采用真空热蒸发法制备SnS与In_2S_3薄膜,研究在不同热退火温度下对SnS与In_2S_3薄膜的物相和光学特性的影响。退火处理后的SnS薄膜的吸收边位置大约在1.5 e V,In_2S_3薄膜有较高的透过率,可以满足太阳电池的光学性能要求。制备得到结构为ITO/In_2S_3/SnS/In/Ag的异质结器件,并讨论退火温度对其整流特性的影响,当退火温度为300℃,器件整流特性最佳。

SnS and InS3 thin film were prepared by the vacuum thermal evaporation in this paper. Meanwhile, the in-fluence of annealing conditions on phase transitions and the optical properties of SnS and In2S3 films were studied. After an-nealing treatment, the absorption edge of SnS film was about 1.5 eV, and In2S3 film had a high transmittance, which couldmeet the demand of the solar cells. The heterojunction devices with the structure of ITO/In2S3 / SnS/In/Ag were prepared, andthe influences of annealing temperature on the rectification characteristics were discussed. The devices showed that the recti-fication characteristics is the best when an annealing condition is 300 C.