摘要
We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions for various substrates. Quality factors of waveguide resonators were measured at 20 mK in both high and low microwave power limits. An inner quality factor of several million was achieved at high power limit for a predominantly（200）-oriented TiN film which was grown on HF cleaned silicon wafer. A quality factor of larger than one million was achieved at high power limit for TiN film grown on sapphire.
We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions for various substrates. Quality factors of waveguide resonators were measured at 20 mK in both high and low microwave power limits. An inner quality factor of several million was achieved at high power limit for a predominantly（200）-oriented TiN film which was grown on HF cleaned silicon wafer. A quality factor of larger than one million was achieved at high power limit for TiN film grown on sapphire.
基金
Project supported by the the NKRDP of China(Grant No.2016YFA0301802)
the National Natural Science Foundation of China(Grant Nos.91321310,11274156,11504165,11474152,and 61521001)
