半导体阵列微剂量探测器前端读出电路设计

Primary Designs on the Front-end Readout Circuits for a Semiconductor Array Microdosimeter

根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波降噪、甄别输出等功能。仿真测试表明:能量探测范围为5~500 fC,单通道功耗约为2 mW,总噪声性能为0.05 f C+1.6×10^(-3)fC/pF。

This paper introduces a kind of wide dynan, ic nology based on the characteristic parameter of the three range readout circuits using GF chrt018IC CMOS techdimensional Si SOI PIN pixel microdosimeter. The circult consists of a charge sensitive amplifier （CSA） with a PMOS input transistor, a pulse shaper, a voltage discriminator and a reference current source. It can realize amplification, filtering and voltage discrimination. The circuits have been simulated and the results show that the input dynamic range is 5 - 500 fC, with a channel dissipation of 2 mW and the total noise performance of 0.05 fC ＋ 1. 6 × 10^-3 fC/pF.