摘要
如今可编程器件在微系统和集成电路系统中得到广泛应用,通常的可重复编程器件采用SRAM来存储配置信息。随着新型存储器技术的发展,采用更高效的非易失性存储单元来替代SRAM使得可重复编程系统的速度和功耗得到提高。介绍了基于阻变单元的可编程nvSRAM和nvLUT,对其器件结构和工作模式进行了概述。nvSRAM和nvLUT可以被用于替代传统可编程逻辑中的SRAM和LUT,其常关和瞬时开启的特性使得静态功耗极低,同时具有更好的CMOS工艺匹配性和更易实现的微缩化前景。
Now the configurable device is widely used in micro electronic systems and integrated circuits. A conventional reconfigurable logic circuit uses the SRAM to store the configuration information. With development in the emerging memory technology, the speed and power consumer of reconfigurable logic can be improved by replacing the SRAM with a more compact nonvolatile memory unit. This paper proposes a novel RRAM-based nvSRAM and nvLUT which can replace normal SRAM and LUT for reco-nfigurable logic. RRAM cell, with characteristics of normally-off and instant-on, suppresses the standby current and also provides better CMOS process compatibility and is easy to realize miniaturiza-tion.
出处
《微处理机》
2017年第2期26-29,共4页
Microprocessors
关键词
阻变随机存储器
随机存储器
查找表
非易失性逻辑
可编程逻辑
可重配置
Resistive random access memory
Static random access memory
Look-up table
Nonvo-latile logic
Programmable logic
Reconfigurable