期刊文献+

RRAM在可编程逻辑中的应用

Application of RRAM in Programmable Logic
下载PDF
导出
摘要 如今可编程器件在微系统和集成电路系统中得到广泛应用,通常的可重复编程器件采用SRAM来存储配置信息。随着新型存储器技术的发展,采用更高效的非易失性存储单元来替代SRAM使得可重复编程系统的速度和功耗得到提高。介绍了基于阻变单元的可编程nvSRAM和nvLUT,对其器件结构和工作模式进行了概述。nvSRAM和nvLUT可以被用于替代传统可编程逻辑中的SRAM和LUT,其常关和瞬时开启的特性使得静态功耗极低,同时具有更好的CMOS工艺匹配性和更易实现的微缩化前景。 Now the configurable device is widely used in micro electronic systems and integrated circuits. A conventional reconfigurable logic circuit uses the SRAM to store the configuration information. With development in the emerging memory technology, the speed and power consumer of reconfigurable logic can be improved by replacing the SRAM with a more compact nonvolatile memory unit. This paper proposes a novel RRAM-based nvSRAM and nvLUT which can replace normal SRAM and LUT for reco-nfigurable logic. RRAM cell, with characteristics of normally-off and instant-on, suppresses the standby current and also provides better CMOS process compatibility and is easy to realize miniaturiza-tion.
作者 刘义凯
出处 《微处理机》 2017年第2期26-29,共4页 Microprocessors
关键词 阻变随机存储器 随机存储器 查找表 非易失性逻辑 可编程逻辑 可重配置 Resistive random access memory Static random access memory Look-up table Nonvo-latile logic Programmable logic Reconfigurable
  • 相关文献

参考文献1

二级参考文献11

  • 1Y. V. Pershin,M. D. Ventra.Spin memristive systems: spin memory effects in semiconductor spintronic[].Physical Review B Condensed Matter and Materials Physics.2008
  • 2Biolek Z,Biolek D,Biolková V.SPICE model of memristor with nonlinear dopant drift[].Radioengineering.2009
  • 3W. Robinett,M. Pickett,J. Borghetti.A memristor-based nonvolatile latch circuit[].Nanotechnology.2010
  • 4P. O. Vontobel,W. Robinett,P. J. Kuekes.Writing to and reading from a nano-scale crossbar memory based on memristors[].Nanotechnology.2009
  • 5Chua L O.Memristor-the missing circuit element[].IEEE Transactions on Circuit Theory.1971
  • 6J. M. Tour,H. Tao.Electronics: The fourth element[].Nature.2008
  • 7WILLIAMS R S.How we found the missing memristor[].IEEE Spectrum.2008
  • 8Chen Y,Wang X.Compact modeling and corner analysis of spintronic Memristor[].IEEE/ACM International Symposium on Nanoscale Architectures.2009
  • 9N. Gergel-Hackett,B. Hamadani,B. Dunlap.A flexible solution-processed memristor[].IEEE Electron Device Letters.2009
  • 10Huai Y.Spin-transfer torque MRAM (STT-MRAM): challenges and prospects[].AAPPS Bull.2008

共引文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部