沉积时间对Zn(O,S)薄膜性能及Cu_2ZnSnSe_4薄膜电池的影响

Effect of Deposition Time on the Zn(O,S) Thin Film Properties and Cu_2ZnSnSe_4 Thin Film Solar Cells

无镉材料Zn(O,S)因其带隙宽且可调节、无毒无害等优点被作为缓冲层材料重点研究,通过化学水浴法制备Zn(O,S)薄膜,研究了沉积时间的不同(20~35 min)对Zn(O,S)薄膜的成分、结构特性、光学性能及形貌的影响。通过XRD测试可知,水浴法制备的Zn(O,S)薄膜为非晶态。通过透反射谱测试可知,薄膜的光学透过率较高(>80%)。通过表面形貌测试可知,30 min时Zn(O,S)薄膜为致密均匀的小颗粒。将Zn(O,S)薄膜应用在CZTSe电池中,在30 min时获得较高器件转换效率5.37%。

Cd-free Zn（O,S） thin film attracts increasing attention as a buffer layer because of adjustable and wide band gap, environmental friendly and other advantages. The thin film were prepared by chemical bath deposition. The influence of the deposition time on the component, structure, optical and morphological properties of Zn （ O, S） thin films were studied. The deposition time varies between 20 rain and 35 rain. The XRD patterns of Zn （O, S） thin film show that Zn （O, S） layer is amorphous. The optical measurements show that the films have high optical transmission （ 〉 80% ）. The scanning electronic microscopy （SEM） shows that uniform and continuous thin layers with small rounded cristallite for the films deposited for 30 min. Applied it to CZTSe thin film solar cells, the better 5.37% -efficient device is obtained by using deposition time 30 min.