摘要
为提升基准源的精度,降低功耗,设计了一种新型带曲率补偿的低功耗带隙基准电路。该电路根据MOS管亚阈值区固有指数关系去补偿PNP型晶体管发射结电压的高阶温度特性,在只增加两股镜像电流下,该带隙基准电路与传统一阶低压带隙基准电路相比,具有低功耗和更低的温漂系数。基于中芯国际130 nm COMS工艺,仿真表明,温度在-20℃~80℃范围内,温漂为4.6 ppm/℃,电源抑制比为60 dB,输出基准电压为610 mV,整体电路功耗为820 nW。
In order to improve the precision of the reference source, and reduce the power consumption, a low power consumption bandgap reference circuit with curvature compensation was designed. The circuit according to inherent exponential relationship of MOS sub-threshold region compensates higher-order temperature characteristics of PNP transistor emitter junction voltage. The cir- cuit increased only two strands of current mirror making the circuit with low power consumption, and lower temperature coefficient compared with the traditional first order low voltage band gap reference circuit. Based on 130 nm COMS technology of SMIC, simu- lation show that the temperature is in the range of -20 ℃ to 80 ℃, and the temperature coefficient is 4.6 ppm/℃. The power sup- ply rejection ratio is 60 dB, the output reference voltage is 610 mV. The overall circuit power consumption is 820 nW.
出处
《电子技术应用》
北大核心
2017年第5期34-37,共4页
Application of Electronic Technique
关键词
带隙基准
压阈值
低功耗
低压
band gap reference
sub-threshold
low power consumption
low voltage
