聚焦离子束制备透射电镜样品效率提升方法

TEM Sample Preparation Methodology Optimization by FIB

半导体技术的飞速发展对失效分析的效率要求也越来越高。为了提高失效分析过程中透射电镜(TEM)样品制备的速度和效率,本文介绍了四种提高聚焦离子束(FIB)制备透射电镜样品的方法,针对每一种方法,文中详细描述了该方法的改善步骤并展示了改善后的效果。通过FIB样品制备方法的优化和改善,实现了在不同情况下,针对特定的区域同时制备两个或多个TEM样品的目标,使得用TEM可同时完成对多个位置的观测,达到了提高TEM样品制备效率和产出量的目标。实践证明,对于45纳米以及更先进的半导体器件失效分析,使用优化后的样品制备方法,可以快速有效的制备出合格的TEM样品。

With the scaling down of semiconductor technology, the improvement on the throughput of failure analvsis sample preparation becomes very important. This paper reports four novel Focus lon Beam （ FIB ） sample preparation methods for transmission electron microscopy （ TEM ） analysis. The detailed procedures were introduced step by step. To demonstrate the prac.tieality of these techniques in failure analysis, some case studies on 45ran and below technology nodes using these novel methods were also reported. The results show that these new methods are vel7 usefnl for the efficiency improvement of failure analysis, and also helpful to reduce the cycle time, improve the throughput aud output of TEM sample preparation for 45nm and below process.