摘要
报道了多孔硅掺入杂质铝处理的一种新方法。观测了处理后多孔硅的光致发光谱 ,其光谱出现 4个与铝杂质能级有关的发光带。
This article reports a new method of processing porous silion adulterated with the impurity, Aluminium.By observing the photoluminescence spectrum of porous silion after disp o sal, we find that the spectrum appears four luminescence bands relatin g to the impurity's energy level which results from the recomposition for carriers at the higher energy level.
出处
《南阳师范学院学报》
CAS
2002年第4期28-29,共2页
Journal of Nanyang Normal University
关键词
多孔硅
光致发光
发光带
porous silion
photo luminescence
luminescence band