一种高感度深紫外正性化学增幅型抗蚀剂的制备

Preparation of a Kind of Positive Chemically Amplified Deep UV Photoresist Material with High Sensitivity

聚对羟基苯乙烯和环己基乙烯基醚反应得到缩醛保护的聚合物.该聚合物易溶于常见的有机溶剂,具有较好的热稳定性,在248 nm处透明性良好.该聚合物可与聚对羟基苯乙烯-甲基丙烯酸金刚烷基酯及二砜光产酸剂等组成一种三组分正性化学增幅型深紫外光致抗蚀剂,初步研究了该抗蚀剂的感光成像性能.采用Kr F激光(248 nm)曝光,在较低的后烘温度下,显影得到分辨率为180 nm的线条图形.显影后的留膜率在99%以上.在光致抗蚀剂体系中引入对羟基苯乙烯-金刚烷基甲基丙烯酸酯共聚物,可提高光刻胶材料的玻璃化转变温度,有利于其实际应用.

With the reaction protected product with acetal of poly （4-hydroxystyrene） （ PHS ） and cyclohexyl vinyl ether （ CVE ）, a partly groups was prepared. The product PHS-CVE shows good solubilities in common photoresist solvents, high thermal stability and good transparency at 248 nm wavelength. A new kind of positive chemically amplified 248-nm photoresist can be formed by this polymer, disulfone PAG and copolymer of 4-hydroxy styrene and 3-hydroxy-l-adamantyl methaerylate. Lithographic performance was investigated via KrF laser exposure tool. A clear positive-tone pattern with 180 nm line width was obtained under low post exposure bake （ PEB ） temperature. Poly （ 4-hydroxy styrene-eo-3-hydroxy-l-adamantyl methacrylate ） incorporated to the resist can increase the glass transition temperature of the photoresist film, which makes the resist material applicable for 248-nm lithography process.