期刊文献+

基于GaAs HBT工艺的动态分频器的研究与设计

Research and design of dynamic frequency divider based on HBT GaAs technology
下载PDF
导出
摘要 针对静态分频器工作频率越高功耗越大的问题,本文采用GaAs HBT工艺研究设计了高性能动态分频器。通过对动态分频器结构进行研究,采用有源负载代替传统的电阻负载,提高了分频器工作的频率。同时对动态分频器进行电路设计,并对其进行仿真,得出其分频范围为9~15 GHz,具有良好的输入灵活度,功耗仅为130.26m W,满足设计要求。 Aiming at the problems of static frequency divider frequency fiigher the greater the power. In this paper, the GaAs HBT process of high performance dynamic frequency divider is designed. Through the study on the dynamic frequency divider structure, with active load instead of traditional resistive load, improve the frequency divider work. Also on dynamic frequency divider for circuit design, and carries on the simulation, it is concluded that the frequency range with good flexibility of input 9 15GHz, power only for 130.26mW and meet the design requirements.
出处 《电子设计工程》 2017年第9期125-127,131,共4页 Electronic Design Engineering
基金 国家自然科学基金(51190103)
关键词 分频器 GaAsHBT 锁相环 直流功耗 frequency divider HBT GaAs phase locked loop DC power consumption
  • 相关文献

参考文献6

二级参考文献51

  • 1杨文荣,曹家麟,冉峰,王键,秦霆镐.一种适用于RF频率合成器的CMOS高速双模前置分频器[J].上海大学学报(自然科学版),2005,11(1):20-23. 被引量:5
  • 2袁博鲁.超高频 1500MHz ECL前置固定分频器的研究[J].微电子学,1993,23(1):1-5. 被引量:3
  • 3何静,李清峰.基于FPGA/CPLD的占空比为1∶n的n分频器的设计[J].现代电子技术,2006,29(8):17-18. 被引量:4
  • 4Griffith Z,Parthasarathy N,Rodwell M J W,et al.An ultra low-power (≤ 13.6 mW/latch) static frequency divider in an InP/InGaAs DHBT technology[C] //Proceedings of 2006 IEEE MTT-S International Microwave Symposium Digest.San Francisco,California,USA,2006:506-509.
  • 5Cheng K H,Hung C L.A sub-1 V low-power high speed static frequency divider[C] //Proceedings of 2007 IEEE International Symposium on Circuits and Systems.New Orleans,LA,USA,2007:3848-3851.
  • 6Bai S Y,Luo T Nn,Chen Y J.A 1 V 50 GHz digital-controlled CMOS frequency divider[C] //Proceedings of 2006 Asia-Pacific Microwave Conference.Yokohama,Japan,2006:755 -758.
  • 7Liang B,Chen D,Wang B,et al.A 43 GHz static frequency divider in 0.13 μm standard CMOS[C] //IEEE Canadian Conference on Electrical and Computer Engineering.Niagara Falls,Ontario,Canada,2008:111-114.
  • 8Lu J H,Wang Z G,Tian L,et al.An 8.5 GHz 1:8 frequency divider in 0.35 μm CMOS technology[J].Chinese Journal of Semiconductors,2003,24(4):142 -145.
  • 9Wong J,Cheung V,Luong H C.A 1 V 2.5 mW 5.2 GHz frequency divider in a 0.35 μm CMOS process[J].IEEE Solid State Circuits,2003,38(10):1643 -1648.
  • 10Cao C,Kenneth K O.A power efficient 26 GHz 32:1 static frequency divider in 130 nm bulk CMOS[J].IEEE Microwave and Wireless Components Letters,2005,15(11):721-723.

共引文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部