摘要
Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 ℃.The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques.Deposited films were obtained at-0.60 V vs.SCE and characterized by XRD,SEM,FTIR,optical,photoelectrochemical and electrical measurements.Thickness of the deposited film was measured to be357 nm.X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along（002） plane.FTIR results confirmed the presence of ZnO films at peak558 cm^-1.SEM images showed uniform,compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape.Optical properties of ZnO reveal a high optical transmission（〉80%）and high absorption coefficient（α 〉 10^5 cm^-1） in visible region.The optical energy band gap was found to be 3.28 eV.Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction.Electrical properties of ZnO films showed a low electrical resistivity of 6.54 Ω·cm,carrier concentration of-1.3× 10^17cm^-3 and mobility of 7.35 cm^2V^-1s^-1.
Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 ℃.The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques.Deposited films were obtained at-0.60 V vs.SCE and characterized by XRD,SEM,FTIR,optical,photoelectrochemical and electrical measurements.Thickness of the deposited film was measured to be357 nm.X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along（002） plane.FTIR results confirmed the presence of ZnO films at peak558 cm^-1.SEM images showed uniform,compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape.Optical properties of ZnO reveal a high optical transmission（〉80%）and high absorption coefficient（α 〉 10^5 cm^-1） in visible region.The optical energy band gap was found to be 3.28 eV.Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction.Electrical properties of ZnO films showed a low electrical resistivity of 6.54 Ω·cm,carrier concentration of-1.3× 10^17cm^-3 and mobility of 7.35 cm^2V^-1s^-1.
基金
Project supported by the Algerian Ministry of Higher Education and Scientific Research,Algeria(No.J0101520090018)
