摘要
报道了一款采用三级放大结构的Ku波段高效率GaN功率放大器芯片。放大器设计中通过电路布局优化改善功放芯片内部相位一致性,提高末级晶胞的合成效率,最终实现整个放大器功率及效率的提升。经匹配优化后放大器在14.6~17.0GHz频带内脉冲输出功率大于20 W,功率附加效率大于36%,最高39%。功率放大器芯片采用0.25μm GaN HEMT 101.6mm(4英寸)圆片工艺制造,芯片尺寸为2.3mm×1.9mm。
A Ku-band 20 W,3-stage power amplifier GaN MMIC with high-efficiency was developed.Reactance matching network was adopted to reduce insert loss of the output matching network.The phase congruency of the power amplifier is improved by the optimization of the circuit layout,so as to increase the power and efficiency of the amplifier finally.The amplifier provides a pulsed saturated output power of 20 Wat VDS=28Vover a frequency range of 14.6-17GHz with a power added efficiency more than 36%,the maximum 39%.The amplifier chip is processed with 101.6mm（4-inch）,0.25μm GaN HEMT MMIC technology.The size of the chip is 2.3mm × 1.9mm.
出处
《固体电子学研究与进展》
CSCD
北大核心
2017年第2期77-80,98,共5页
Research & Progress of SSE
