期刊文献+

YN2 monolayer: Novel p-state Dirac half metal for high-speed spintronics 被引量:3

YN2 monolayer: Novel p-state Dirac half metal for high-speed spintronics
原文传递
导出
摘要 In spintronics, it is highly desirable to find new materials that can simultaneously possess complete spin-polarization, high-speed conduction electrons, large Curie temperature, and robust ferromagnetic ground states. Using first-principles calculations, we demonstrate that the stable YN2 monolayer with octahedral coordination is a novel p-state Dirac half metal (DHM), which not only has a fully spin-polarized Dirac state, but also the highest Fermi velocity (3.74×10^5 m/s) of the DHMs reported to date. In addition, its half-metallic gap of 1.53 eV is large enough to prevent the spin-flip transition. Because of the strong nonlocal p orbitals of N atoms (N-p) direct exchange interaction, the Curie temperature reaches over 332 K. Moreover, its ferromagnetic ground state can be well preserved under carrier doping or external strain. Therefore, the YN2 monolayer is a promising DHM for high-speed spintronic devices and would lead to new opportunities in designing other p-state DHMs. In spintronics, it is highly desirable to find new materials that can simultaneously possess complete spin-polarization, high-speed conduction electrons, large Curie temperature, and robust ferromagnetic ground states. Using first-principles calculations, we demonstrate that the stable YN2 monolayer with octahedral coordination is a novel p-state Dirac half metal (DHM), which not only has a fully spin-polarized Dirac state, but also the highest Fermi velocity (3.74×10^5 m/s) of the DHMs reported to date. In addition, its half-metallic gap of 1.53 eV is large enough to prevent the spin-flip transition. Because of the strong nonlocal p orbitals of N atoms (N-p) direct exchange interaction, the Curie temperature reaches over 332 K. Moreover, its ferromagnetic ground state can be well preserved under carrier doping or external strain. Therefore, the YN2 monolayer is a promising DHM for high-speed spintronic devices and would lead to new opportunities in designing other p-state DHMs.
出处 《Nano Research》 SCIE EI CAS CSCD 2017年第6期1972-1979,共8页 纳米研究(英文版)
关键词 spintronics Dirac half metalYN2 monolayer ferromagnetism spintronics,Dirac half metalYN2 monolayer,ferromagnetism
分类号 O [理学]
  • 相关文献

参考文献1

二级参考文献1

共引文献10

同被引文献4

引证文献3

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部