65nm体硅CMOS工艺抗辐射触发器单元单粒子翻转效应研究

Single Event Upset in 65 nm Bulk CMOS Radiation-hardened Flip-flop

介绍了一种采用M照试验,GEO轨道预估结果 uller-C单元作为输出级的DICE结构触发器,设计了相应的单粒子翻转效应验证电路,以及单粒子效应试验软、硬件系统来对加固效果进行验证。利用北京HI-13加速器进行了Cl、Ti、Cu、Br、I和Au等多种重离子辐照试验,GEO轨道预估结果表明DICE结构触发器单粒子翻转率(2.37×10-10upsets/bit/day)明显小于普通结构触发器单粒子翻转率(2.15×10-8upsets/bit/day),该单粒子翻转效应验证电路及试验系统取得了预期的效果。

A DICE flip-flop with muller-C elememt output is presented. To verify the effect of this hardening-by-design techniques, test chip and software/hardware system for single event effect（SEU） experiment were designed. An experiment based on Beijing HI-13 tandem accelerator SEE irradiation facility has been carried with six different particles, including Cl, Ti, Cu, Br, I and Au. The SEU rate prediction on GEO orbit show that DICE flip-flops has much smaller cross-section （2.37×10 10 upsets/bit/day） than normal D flip-flops^ cross-section（2.15×10^-8 upsets /b i t /d ay ） .