Si基中短波双色HgCdTe材料生长及表征

Growth and characterization of SW/MW dual band HgCdTe film on Si substrate

报道了碲镉汞(MCT)分子束外延(MBE)的最新研究进展。基于现有Si基中波、短波HgCdTe材料工艺基础,开发获得了Si基中短波双色HgCdTe材料的生长工艺。使用反射式高能电子衍射分析在线监测生长过程,优化了Si基中短波双色HgCdTe材料生长工艺。获得了具有良好晶体质量的Si基中短波双色HgCdTe材料。

The recent research progress on molecular beam epitaxy growth of HgCdTe on Si substrate is reported. Based on the fabrication technology of MW HgCdTe and SW HgCdTe on Si substrate, the fabrication technology of mo- lecular beam epitaxy growth of SW/MW-HgCdTe on Si based substrate was developed. Through on-line monitoring of RHEED,the fabrication technology for SW/MW-HgCdTe growth on Si substrate was optimized. With this technology, high quality SW/MW-HgCdTe wafers were obtained.