n-Mg_2Si/p-Si异质结太阳电池的模拟及分析

Simulation and Optimization of n-Mg_2Si/p-Si Heterojunction Solar Cell

运用AMPS-1D软件对n-Mg_2Si/p-Si异质结太阳电池进行模拟,依次讨论了Mg_2Si层厚度、掺杂浓度和温度对电池性能的影响。结果表明:随着Mg_2Si层厚度的增加,短路电流和转换效率均有较大提高;开路电压也略有升高。随着温度升高,短路电流逐渐升高,转换效率、开路电压及填充因子均不断降低。室温下,Mg_2Si层轻掺杂时的掺杂浓度在5×10^(19)cm^(-3)处,转换效率达到最大值5.518%。而同样条件下Mg_2Si层重掺杂时的转换效率更高,当掺杂浓度达到10^(21)cm^(-3)后,转换效率最大值为11.508%,填充因子最大值为0.868。

The performance of n-Mg2Si/p-Si heterojunction solar cell was simulated based on AMPS-1D software. And the influences of the MgzSi layer thickness, doping concentration and operating temperature on the battery performance were discussed in turn. The results show that： the short-circuit current and conversion efficiency were improved greatly with the increasing of Mg2Si layer thickness and also the circuit voltage slightly increased. With the temperature rising, the short circuit current gradually increases at first and then flatten out while the conversion efficiency, open circuit voltage and fill factor are coming down all the time. At room temperature, The conversion efficiency up to 5.518% and Mg2Si layer doping concentration is 5 ×10^19 cm^-3 when lightly doped, while at the same condition that the conversion efficiency will be higher as it be heavily doped, the Maximum conversion efficiency is 11.508% and the filling factor is 0.868 when Mg2Si layer is doped to 10^21 cm^-3