非晶氧化铟镁薄膜晶体管的光电特性研究

Photo-electrical Properties of Amorphous MgInO Thin Film Transistors

研究了氧化铟镁(MgInO)薄膜晶体管在不同波长下的光响应。实验表明,入射光波长减小,光电流将增加。和积累区相比,耗尽区具有更高的信噪比,更适合于紫外探测。器件在短波时具有较大的响应度(>1A/W),截止波长在360nm左右。同时研究了源漏电压和沟道长度对光电流的影响。光电流与源漏电压之间具有良好的线性关系;沟长变短,渡越时间减小,可获得更高的光电增益。

The responsivity of MglnO TFTs in the depletion state with different wavelength was investigated. The devices show a cutoff wavelength of 360 nm, which is suitable for UV detection. In addition, the influences of source-to-drain voltage and the channel length on the photocurrent were illustrated as well. The photocurrent shows a high linearity to source-to-drain voltage, while with the channel length decreasing, the photocurrent increases as the transit time is shortened.