摘要
GaN作为新一代半导体材料具有宽禁带、高击穿场强、高饱和电子漂移速率以及抗辐射能力强等优点成为近几年来的研究热点,随着GaN功率管性能的不断提高,以GaN为基础的微波功率器件的应用取得了很大的进步。根据电子对抗领域微波固态功放的特点,设计一款基于GaN功率器件的X/Ku波段20W宽带固态功放,并给出了测试结果。
As a new generation of semiconductor materials, the GaN become a hot topic in recent years, whose advantages are wide bandgap, high breakdown voltage, high saturated electron drift velocity, and strong ability to resist radiation. With the increasing performance of the GaN power device, the application of the GaN microwave solid-state power device has made great progress. Based on the characteristics of microwave solid-state power amplifier in the field of electronic countermeasures, a X/Ku band broadband GaN 20W solid state power amplifier is designed, and the test results are given.
出处
《航天电子对抗》
2017年第2期41-44,共4页
Aerospace Electronic Warfare
关键词
电子对抗领域
微波固态功放
GaN功率器件
the field of electronic countermeasures
microwave solid-state power amplifier
GaN power device
