退火温度对Ag/VO_x/Al阻变存储器性能的影响

Effects of the Annealing Temperature on the Performances of the Ag/VO_x/Al Resistive Random Access Memory

阻变存储器(RRAM)是下一代最有潜力的非易失性存储器。利用磁控溅射、电子束蒸发和离子束溅射方法制备了一种Ag/VO_x/Al结构的RRAM。使用半导体参数分析仪(Agilent B1500A)测试了器件的电学特性,器件具有双极阻变特性。器件的高阻态的传输机制为空间电荷限制电流(SCLC)机制,低阻态的传输机制为欧姆机制,器件的阻变机制为金属导电细丝机制。研究了不同退火温度(150~300℃)对Ag/VO_x/Al器件阻变性能的影响。研究表明,不同退火温度不仅会影响VO_x薄膜的表面形貌与晶面组成,而且会影响器件的电学性能,在退火温度为200℃时器件的阻变窗口最大,而在300℃时器件的耐久性最优秀。适当的退火温度有益于改善器件的阻变性能。

Resistive random access memory （RRAM） is the next generation of the most promi- sing nonvolatile memory. A RRAM with Ag/VOx/Al structure was prepared by magnetron sput- tering, electron beam evaporation and ion beam sputtering methods. The electrical characteristics of the device were measured by semiconductor parameter analyzer （Agilent B1500A）. The device shows bipolar resistance swithing characteristics. The transmission mechanisms of the high resistive state and the low resistive state for the device are the space charge limited current （SCLC） mechanism and ohmic mechanism, respectively, and the resistance swithing mechanism of the device is the metal conductive filament mechanism. The effects of different annealing temperatures （150- 300 ℃） on the resistance swithing performance of Ag/VOx/Al devices were studied. The research shows that different annealing temperatures can affect the surface morphology and crys- tal plane composition of the VOx thin film, and the electrical properties of the devices. The device shows the widest resistance swithing window at the annealing temperature of 200 ＊C and the best durability performance at the annealing temperature of 300 ℃. The proper annealing temperature is beneficial to improve the resistance swithing performance of the device.