S波段GaN内匹配功放管

Design and Implementation of an S-Band 150 W GaN with Internally Matched Power Amplifier

实现了一款应用于S波段雷达系统的GaN HEMT内匹配功放。以小信号S参数和Load-pull结果为基础进行内匹配电路设计和仿真,采用单个24 mm GaN HEMT管芯实现大功率输出。使用微波仿真软件ADS进行输出匹配和小信号仿真和优化,得到良好的仿真结果并给出最终的测试数据。在34 V漏电压、1 ms周期、10%占空比的测试条件下,40 d Bm输入功率时,2.7~3.1 GHz频率范围内,输出功率超过170 W,功率附加效率超过55%。

The paper describes a GaN HEMT with internally matched power amplifier for S-band radar applications. The design and simulation of internally matched network is based on small-signal S-parameters and Load-pull result. By using a 24 mm GaN HEMT, the internally matched power amplifier demonstrates a high output power performance. Simulation and optimization of output matching network and small-signal are performed with microwave simulation software ADS. Simulation results are obtained and the test data are then presented. During its working band of 2.7 GHz to 3.1 GHz, the output power is exceeds 170 W with PAE 55%under conditions of 34 V drain voltage, 1 ms period, 10% duty ratio and 40 d Bm input power.