氩氧流量比对CeO_x-SnO_x膜微观结构及光学性能的影响

Effect of Ar/O_2 Flow Ratio on the Microstructures and Optical Properties of CeO_x-SnO_x Thin Films

采用磁控反应共溅射的方法,以金属Ce和Sn为金属源,成功地制备出CeO_x-SnO_x薄膜。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)等测试手段对薄膜的结构、表面形貌及成分进行了分析和表征。结果表明薄膜以岛状模式生长,随氩氧比降低,结晶性增强,出现CeO_2和SnO相。此外,利用紫外-可见分光光度计对薄膜的光学性能进行了研究,测试结果表明薄膜对紫外光有极强的吸收作用。当氩氧流量比为3∶1时,紫外光平均透过率仅为5.80%,而可见光平均透过率为81.48%。

CeOx-SnOx thin film were grown on glass via a magnetron co-sputtering process based on cerium and tin target. The structure, morphology and composition of CeOx-SnOx thin film were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, Transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）. The results show that the film grows in island mode. The crystallinity of thin films is enhanced, the occurrence of CeO2 and SnO, with the decreasing of the Ar/O2 flOW ratio. In addition, the optical properties of the film was investigated by UV- visible spectroscopy. The investigation indicate that the film reveal a strong UV absorption. The average transmittance of visible is 81.48%, and the transmittance of UV is only 5.80% when the Ar/O2 flow ratio is 3： 1.