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功率循环下IGBT模块电热参数变化规律分析 被引量:3

Analysis of the Electro-thermal Parameters Variation of the IGBT Module in the Power Cycle
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摘要 为了分析IGBT模块老化过程中电热参数的变化规律,对IGBT模块进行了功率循环加速老化试验,并基于单脉冲测试方法在加速老化试验进程中每间隔1 000次功率循环,测取一次IGBT的结温、集电极电流与饱和压降三维关系曲面、开关能耗、热阻抗以及瞬态热阻抗曲线。IGBT模块老化失效时,其饱和压降、开通能耗、关断能耗以及热阻较其初始值分别增大了3.92%、12.05%、18.87%和22.65%,试验结果表明随着IGBT模块功率循环次数的增多,相同工作条件下IGBT饱和压降的增幅逐渐加大,而饱和压降、结温和集电极电流三者间的内在关系没有明显变化;IGBT瞬态热阻抗曲线暂态部分几乎不变,稳态部分向上移动的幅度逐渐加大;测取的IGBT模块电热参数中饱和压降增幅最小,开关能耗增幅较大,模块热阻的增幅最为明显。 The power cycle accelerated aging test is carried on the IGBT module to analyze the variation law of the electro-thermal parameters during the aging process of the IGBT module, and the three dimensional relation surface of IGBT saturation voltage-junction temperature-collector current, switching loss, thermal impedance and transient thermal impedance curve are measured every 1000 power cycles based on the single pulse test method. After IGBT module aging failure, the IGBT saturation voltage, turn-on loss, turn-off loss and thermal resistance are increased by 3.92 %, 12.05 %, 18.87 % and 22.65 % respectively. The experimental results show that the increase of IGBT saturation voltage increases in the same operating conditions with the increase of the power cycle of the IGBT module, and the three dimensional relation surface of saturation voltage-junction temperature-collector current do not change significantly; The transient state of the transient thermal impedance curve of IGBT is ahnost unchanged, and the amplitude of the steady state is gradually increased; The increase of the saturation voltage of the IGBT module is the smallest, and the increase of the switching loss and thermal impedance is the largest.
出处 《火力与指挥控制》 CSCD 北大核心 2017年第5期160-163,166,共5页 Fire Control & Command Control
基金 山西省教育厅"面向工程 探索创新"电气工程及其自动化专业建设基金资助项目
关键词 IGBT模块 功率循环 老化试验 电热参数 IGBT module, power cycle, aging test, electro-thermal parameters
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  • 1Wang H,Ma K,Blaabjerg F.Design for reliability of power electronic systems[C]//IECON 2012-38th Annual Conference on IEEE Industrial Electronics Society.Montreal:IEEE,2012:33-44.
  • 2Yang Shaoyong,Xiang Dawei,Bryant A,et al.Condition monitoring for device reliability in power electronic converters:A review[J].IEEE Transactions on Power Electronics,2010,25(11):2734-2752.
  • 3Hung Tuanyu,Liao Liling,Wang C C,et al.Life prediction of high-cycle fatigue in aluminum bonding wires under power cycling test[J].IEEE Transactions on Device and Materials Reliability,2014,14(1):484-492.
  • 4Mei Yunhui,Lian Jiaoyuan,Chen Xu,et al.Thermo-mechanical reliability of double-sided IGBT assembly bonded by sintered nanosilver[J].IEEE Transactions on Device and Materials Reliability,2014,14(1):194-202.
  • 5Li Y,Agyakwa P A,Johnson C M.Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules[J].IEEE Transactions on Device and Materials Reliability,2013,13(1):9-17.
  • 6Darveaux,R.Effect of simulation methodology on solder joint crack growth correlation[C]// Electronic Components & Technology Conference.Las Vegas:IEEE,2000:1048-1058.
  • 7Jian Z,Changzhi L,Xiaoling Z,et al.FEM-based thermal analysis of IGBT.in Microelectronics and Electronics (PrimeAsia)[C]// 2010 Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics.Shanghai:IEEE,2010:321-324.
  • 8Khatir Z,Lefebvre S.Thermal analysis of power cycling effects on high power IGBT modules by the boundary element method[C]//Seventeenth Annual IEEE Symposium in Semiconductor Thermal Measurement and Management.San Jose:IEEE,2001:27-34.
  • 9Nielsen R O,Due J,Munk-Nielsen S.Innovative measuring system for wear-out indication of high power IGBT modules[C]//Energy Conversion Congress and Exposition (ECCE).Phoenix:IEEE,2011:1785-1790.
  • 10Huang Hui,Mawby P A.A lifetime estimation technique for voltage source inverters[J].IEEE Transactions on Power Electronics,2013,28(8):4113-4119.

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