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石墨烯电子应用的发展与挑战 被引量:1

Development and challenges of application of graphene electronics
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摘要 石墨烯具有许多创纪录的出色性能,被誉为21世纪新材料,这使石墨烯的应用涉及广泛领域。但在众多应用中,石墨烯在电子领域的应用尤其值得关注。根据2016年年底美国的市场调研公司Grand View Research按产品、应用、地域和细分市场划分发布的《2014—2025年石墨烯市场规模和趋势的预测报告》,电子行业是石墨烯最受欢迎的应用领域。据统计,2015年电子行业是石墨烯最大的应用市场,在石墨烯的各类应用市场中占据40%的份额,这归结于消费电子不断增长的需求,尤其是智能手机、平板电脑,已成为电子应用细分市场发展最大驱动力。文章分析了石墨烯性能优势、全球石墨烯专利分布现状、世界电子行业巨头在石墨烯电子领域的研发状况,揭示了石墨烯在电子应用领域的发展潜能、当前面临的挑战,以及欧盟对石墨烯电子领域的发展预期。 Witil many record breaking properties, graphene variety of potential applications, among them, its application is touted as the material of 21 century and has a great in electronics worths particular attention. According to a 2014--2025 Graphene Market Size and Trend Analysis by product, application, region and segment forecasts by Grand View Research, Inc. in 2016, the electronic area is tile most popular fields of graphene. The electronics industry dominated the application segment of the graphene market in 2015, with a share of over 40%. Rising demand for consumer electronics including smart phones and tablet PC is expected to be the biggest industry driver in this segment. This article studies property advantages of graphene, global patent portfolio and global electronic giants in graphene R&D. The article also illustrates development potential of graphene in electronics, its current challenges as well as development expectations by European academic community.
作者 高岩 苏东艳
出处 《江苏科技信息》 2017年第12期52-55,共4页 Jiangsu Science and Technology Information
关键词 石墨烯电子应用 发展 挑战 application of graphene electronics development challenges
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  • 1Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films[J]. Science, 2004,306 (5296) :666.
  • 2Geim A K, Novoselov K S. The rise of graphene[J]. Nat Mater, 2007,6(3) : 183.
  • 3Katsnelson M I, Novoselov K, et al. Chiral tunnelling and the Klein paradox in graphene[J]. Nat Phys, 2006,2 (9) : 620.
  • 4Huard B,Sulpizio J A,Stander N,et al. Transport measurements across a tunable potential barrier in graphene[J]. Phys Rev Lett,2007,98(23) :236803.
  • 5Zhang Y B,Tan Y W,Stormer H L,et al. Experimental observation of the quantum Hall effect and Berry's phase in graphene[J]. Nature, 2005,438(7065) : 201.
  • 6Novoselov K S,Geim A K,Morozov S V, et al. Two-dimensional gas of massless Dirac fermions in graphene[J]. Nature, 2005,438 (7065): 197.
  • 7Oostinga J B, Heersche H B, Liu X L, et al. Gate-induced insulating state in bilayer graphene devices[J]. Nat Mater, 2008,7(2) : 151.
  • 8Kobayashi Y, Fukui K, Enoki T, et al. Observation of zigzag and armchair edges of graphite using scanning tunneling microscopy and spectroscopy[J]. Phys Rev B, 2005,71(19) : 193406.
  • 9Niimi Y, Matsui T, Kambara H, et al. Scanning tunneling microscopy and spectroscopy studies of graphite edges[J]. Appl Surf Sci, 2005,241 (1-2) : 43.
  • 10Owens F J. Effect of oxidation of graphene nanoribbons on electronic and magnetic properties[J]. Mol Phys, 2008,106 (21-23):2441.

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