GaN基半导体异质结构的外延生长、物性研究和器件应用

Study of the epitaxial growth, physical properties and electronic devices of GaN-based semiconductor heterostructures

GaN基宽禁带半导体异质结构具有非常强的极化效应、高饱和电子漂移速度、高击穿场强、高于室温的居里转变温度、和较强的自旋轨道耦合效应等优越的物理性质,是发展高功率微波射频器件不可替代的材料体系,也是发展高效节能功率电子器件的主要材料体系之一,在半导体自旋电子学器件上亦有潜在的应用价值。GaN基异质结构材料、物理与器件研究已成为当前国际上半导体科学技术的前沿领域和研究热点。本文从GaN基异质结构的外延生长、物理性质及其电子器件应用三个方面对国内外该领域近年来的研究进展进行了系统的介绍和评述,并简要介绍了北京大学在该领域的研究进展。

Owing to their excellent physical properties, such as strong piezoelectric and sponta- neous polarization, high saturation drift velocity, high critical breakdown electric field, high Curie temperature, and strong spin- orbit coupling effect, GaN-based wide band-gap semiconductor heterostructures are the most favorite materials in developing high-power microwave electronic devices as well as energy-saving power electronic devices. Potential applications in semiconduc- tor spintronics are also expected. Therefore, the study of GaN-based heterostructure materials, physics, and devices has attracted great interest in the world in recent years. In this paper, world-wide research progresses on the epitaxial growth, physical properties and device fabrication of GaN-based heterostructures in recent years are reviewed, including a brief introduction of the academic achievements in this field at Peking University.