摘要
本文提出并实现了一种用于测量SRAM时序参数的延时链电路,在SMIC 130nm工艺下精度可以达到4.9ps.该延时链电路包括可调链路和固定链路,可调链路由可编程粗调单元和精调单元组成,固定链路由固定单元组成.并将待测SRAM和测量电路集成入SOC系统中,从而实现SRAM的建立、保持和读写时间切换测量的功能.
The paper mainly introduced a delay line circuit for SRAM timing parameter measurement. Under the process of SMIC 130nm, the precision could reach 4.9 ps. The delay chain circuit includes programmable and fixed path. Programmable path includes programmable coarse block and fine block; fixed path is made of fixed units. SRAM to be measured and measurement circuit are integrated to a SOC system so as to realize the SRAM function of establishment, hold and access time measurement.
出处
《微电子学与计算机》
CSCD
北大核心
2017年第6期18-20,25,共4页
Microelectronics & Computer
基金
国家自然科学基金项目(61176037)