纯相SnO_2纳米晶薄膜的一步电沉积制备及其结构与光电性能研究

Pure-phase SnO_2 nanocrystal films prepared by one-step electrodeposition and their structural and optoelectronic properties

采用一步电沉积在氧化铟锡(ITO)导电玻璃基底上制备纯相SnO_2纳米晶薄膜材料,通过改变沉积条件,研究沉积电位、镀液温度和HNO_3浓度对薄膜组成结构的影响。结果表明:当沉积电位为-0.9 V(vs.SCE),镀液温度为65℃,HNO_3浓度为50 mmol/L时,所制备的SnO_2纳米晶薄膜为纯相金红石型结构,且薄膜相对连续致密。光电性能测试表明,该薄膜具有优异的光电性能,在可见光区透光率大于90%,带隙为3.75 e V,且电阻率为2.2×10^(-3)Ω·cm,载流子浓度为1.9×10^(20)cm^(-3),载流子迁移率为14.8 cm^2/(V·s)。故所制备的SnO_2纳米晶薄膜是太阳能电池的理想窗口层材料。

In this work, pure-phase tin oxide （SnO2） nanocrystal films were deposited on indium tin oxide （ITO） substrates by a one-step electrodeposition approach followed by annealing treatment. The effects of varying the electrodeposition potential, electrolyte temperature and HNO3 concentration on the crystal structures of SnO2 films were investigated by varying the deposition parameters. The results showed that a pure tetragonal futile SnO2 film was obtained at the electrodeposition potential of - 0.9 V （vs. SCE） , an electrolyte temperature of 65 ℃ , and an HNO3 concentration of 50 mmol/L. The obtained SnO2 film possessed relatively continuous and compact surface features, and exhibited good optical and electrical performance with a transmittance higher than 90% in the visible light region, a band gap of 3.75 eV, as well as an electrical resistivity of 2.2 ×10^-3Ω·cm, a carrier concentration of 1.9 × 10^20 cm^-3 and a carrier mobility of 14. 8 cm^2/（V·s）. Therefore, the SnO2 nanocrystal film can be used as a promising window layer material for solar cells.