利用AMPS对N型衬底上双面HIT太阳电池的模拟优化

Simulation Optimizing of Bifacial HIT Solar Cell on N-Type Substrate with AMPS

运用AMPS-1D软件对TCO/a-Si:H(p+)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+)/TCO双面HIT异质结构太阳电池进行仿真,分析其光伏特性随本征层厚度、界面缺陷态密度以及窗口层掺杂浓度的变化规律。结果表明:本征层虽有降低界面缺陷态密度的积极作用,但也有引起光学损失的负面影响,故本征层厚度的设计要兼顾二者的影响;窗口层掺杂浓度越高,太阳电池的开路电压越高,短路电流密度越低,其中短路电流密度的降低可用窗口层中的电场分布进行很好的解释。

The HIT solar cell of TCO/a-Si ： H （ p ＋ ）/a-Si ： H （ i ）/c-Si （n）/a-Si ： H （ i ）/a-Si ： H （ n ＋ ） / TCO was simulated with the software AMPS-1D. The variation laws of photovoltaic performance as functions of the thickness of the intrinsic layer, state density of interface defects, and the doping concentration of the window layer were analyzed. The simulation results show that intrinsic layer has both advantage of reducing the interface defects state density and disadvantage of causing the optical loss. Therefore, two factors should be fully considered to design the thickness of the intrinsic layer. The higher the doping concentration of the window layer, the higher the open-circuit voltage of solar cell, and the lower short-circuit current density. The reducing of short-circuit current density can be explained by the electric field distribution in the window layer.