基于有限元方法的有机薄膜晶体管性能分析

Simulation of organic thin-film transistor based on finite element method

有机薄膜晶体管(organic thin film transistor,OTFT)是一种以有机半导体材料作为有源层的晶体管,是有机电子学的重要研究内容之一。近年来,人们在实验的基础上得到了一些OTFT的基本特性。旨在从基本的物理模型和数学模型出发,通过有限元方法对顶栅底接触式的OTFT器件进行模拟,从而在理论上将OTFT器件的部分特性表征出来。经过模拟,可以看到OTFT器件的电位分布和载流子密度分布趋势与实验得到的特性基本一致,尤其是夹断现象的产生,与实际情况基本吻合。

Organic thin-film transistor（OTFT）,a kind of transistors based on organic semiconductor materials as the active layer,is one of the important researches on organic electronics.In recent years,we have got some basic characteristics of the OTFT by experiment.In order to get some characteristics of the OTFT device in theory,we simulate the OTFT device with top-gate and bottom contact geometry through the finite element method on the basis of physical model and mathematical model in this article.The simulation shows that the potential distribution and carriers distribution of OTFT device almost accord with the experimental results,especially the pinch-off phenomenon occurs,which is in line with the results basically.