摘要
该文通过对SiC单晶生长工艺和设备的研究,重点分析研究了压力对SiC单晶生长的影响,并给出了压力可靠运行参数和方案,满足SiC单晶生长工艺的稳定和实验重复性的要求。
This paper is based on the research of the SiC crystal growth technology and equipment,analysis and study the effect of pressure on SiC single crystal growth,reliable operation and gives the pressure parameter and scheme,satisfy the stability of the SiC crystal growth technology and experimental repeatability.
出处
《电子质量》
2017年第6期51-54,共4页
Electronics Quality
