三氯氢硅歧化法多晶硅生产工艺的热力学分析

Thermodynamic analysis of polysilicon production process by trichlorosilane disproportionation method

根据反应平衡时体系Gibbs自由能最小原理,对歧化法生产硅烷的过程进行了模拟分析,得出了不同条件下反应的平衡转化率及适宜的操作条件,依据计算结果设计了三氯氢硅歧化法生产硅烷的四塔流程,并且对三氯氢硅歧化反应精馏塔,二氯二氢硅歧化反应精馏塔进行了详细的灵敏度分析,得到了最优的过程参数,根据优化过程参数操作后,硅烷的单程实收率达到9.45%。

According to the principle of Gibbs free energy minimization in the system reaction equilibrium, the process, that producing silane by the method of Trichlorosilane disproportionation reaction, is simulated and analyzed, the equilibrium conversion rate under different conditions and the suitable operating conditions is obtained. A process containing four towers is proposed according to the calculation results.Meanwhile, A detailed sensitivity analysis is carried out for Trichlorosilane and dichlorosilane disproportionation reaction distillation towers , so the optimal process parameters are obtained.When the optimized process parameters were carried out, the single pass yield of silane was 9.45%.