摘要
分析了大电流状态下将出现的问题,寻找解决方法。提出了采用MOSFET作为整流器件来降低整流器正向电压的可能性。分析了MOSFET工作在整流状态下需要工作在输出特性的第三象限以及MOSFET输出特性第三象限的特点。分析了工作在整流器状态的MOSFET导通电阻对导通电压的影响,提出采用极低导通电阻作为100 A级整流器需要的MOSFET要求的参数。最后,通过实验验证了提出的方法及理论。
Problems in large current state will be analyzed to find out the solutions in the paper. The possibility of using MOSFET as a portion of rectifier to reduce the forward voltage of rectifier is proposed. MOSFET output characteristics in third quadrant is analyzed when it works in the rectifying state. The influence of turn-on resister on turn-on voltage has been analyzed too. Extremely low turn-on resistance as 100 amperes level MOSFET parameter is proposed. At last, the methods and theories are verified by experiments.
出处
《辽宁工业大学学报（自然科学版）》
2017年第3期146-148,共3页
Journal of Liaoning University of Technology(Natural Science Edition)
