元素掺杂对PbTe基热电材料性能影响的评述

Effect of Element Doping on the Properties of PbTe Based Thermoelectric Materials

分析了三元、四元和五元PbTe基合金中掺杂元素的选择原则及其对热电性能提升作用,并对PbTe基材料的制备方法进行了总结分析。PbTe掺杂Tl,Se和Bi后,在晶体中产生第二相,降低晶界散射形晶格热导率、提高材料态密度增加Seebeck系数,从而提高其性能。当在PbTe中共溶CdTe、PbS、PbI_2时,会形成原子置换结构或搭建构建块,降低热导率,提高ZT值,优化其性能。Ag,Na,和K元素的互相掺杂会形成类似多晶结构,晶格的特征发生了改变。掺杂元素改变了PbTe材料的导电和导热性,使材料具备了更加优越的热电性能。

The research progress forternary, quaternary, and quinary alloy of PbTe--based thermoelectric materials with different doped elements are reviewed, and the principle of doping elements selection and their effect on the properties on the performances of PbTe based thermoelectric materials are discussed. Doping with T1, Se and Bi, the second phase which can increase the grain boundary scattering or the state density of material is produced in the crystal. This second phasemakes the lattice thermal conductivity de- crease and the Seebeck coefficient increase and results in an increased of their thermoelectric performance. When CdTe, PbS, PbI2 are added as solid solution into PbTe, atomic displacement or the construction of building blocks takes place. It can reduce the thermal conductivity and improve the ZT value. The doping of Ag, Na, K elements can form a polycrystalline structure to some extent, and this change of crystal structureimprove the properties of PbTe based thermoelectricmaterials.