摘要
三相电压源型桥式脉宽调制(PWM)整流器由于其交流侧功率因数高、谐波含量少等优点,广泛应用于各种工业、航空航天等场合。近年来出现的碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)功率器件具有阻断电压高、导通电压低、开关损耗低、耐高温工作等特点,对整流器效率的提升及实现高功率密度均有重要意义。将SiC MOSFET应用于三相桥式PWM整流器,研究了整流器高频和低频数学模型,并针对高频下数字控制处理时间长的影响,对程序中的空间矢量脉宽调制(SVPWM)算法进行分析简化。最后设计了5 kW三相桥式PWM整流器原理样机,通过仿真与实验验证了控制算法的合理性。
Three-phase bridge voltage source pulse width modulation(PWM) rectifier, due many advantages such as high power factor and low harmonies content, is widely used in industry and aeronautics applications.Silicon carbide(SiC) metal-oxide-semiconductor field effect transistor(MOSFET) which emerged in recent years highlights with low forward voltage, high blocking voltage,low switching loss and high operational case temperature, are of vital importance to in- crease power density and effficiency.On this basis, SiC MOSFET are applied in three-phase PWM rectifier,and its di- gital controlling system is designed.To increase switching frequency,the mathematical models are established under high and low frequency condition, and space vector PWM (SVPWM) is simplified.Finally, a 5 kW three-phase PWM rectifier prototype is designed.The simulation and experiment results verify the theoretical analysis.
出处
《电力电子技术》
CSCD
北大核心
2017年第6期1-4,共4页
Power Electronics
基金
国家自然科学基金(51377082)~~
关键词
整流器
高频化
空间矢量脉宽调制
rectifier
high frequency
space vector pulse width modulation