期刊文献+

电容式加速度传感器设计及工艺加工 被引量:13

Design and Process of a Capacitive Accelerometer Sensor
下载PDF
导出
摘要 针对精确制导的应用需求,设计了一种量程为100g"三明治"电容式加速度传感器,通过ANSYS仿真软件在100g及10 000g高过载条件下进行应力分析和模态分析,并通过Matlab分析、优化结构参数从而确定传感器敏感结构的具体尺寸。利用阻抗分析仪分析得到了传感器的静态电容为14.09 pF,结构输出灵敏度为0.281 8 pF/g,传感器的输出灵敏度为13.5μV/g。根据结构特性设计工艺流程并进行关键工艺加工:硅基质量块双面湿法腐蚀、ICP干法刻蚀及玻璃通孔电镀工艺。最终,通过实验验证电容式加速度传感器设计的可行性。 According to the application requirements of precision guidance,a "sandwich" capacitive accelerometer sensor with the range of 100 g was designed.Using the ANSYS simulation software,the stress analysis and modal analysis were carried out under high overload conditions of 100gand10 000 g.The size of the sensitive structure of the accelerometer sensor was obtained by the MATLAB analysis and optimal structure parameters.The analysis results of the impedance analyzer show that the static capacitance of the sensor is 14.09 pF,the output sensitivity of the structure is 0.281 8 pF/g,the sensitivity of the sensor is 13.5μV/g.According to the structural characteristics of the accelerometer sensor,the process flow was designed and the key processes were carried out,including the double-sided wet etching based on silicon,ICP dry etching and glass through-hole electroplating.Finally,the design feasibility of the capacitive accelerometer sensor was verified by experiments.
出处 《微纳电子技术》 北大核心 2017年第7期472-478,共7页 Micronanoelectronic Technology
基金 国家杰出青年科学基金资助项目(51225504)
关键词 电容式加速度传感器 高过载 湿法腐蚀 电镀工艺 灵敏度 capacitive accelerometer sensor high overload wet etching electroplating sensitivity
  • 相关文献

参考文献2

二级参考文献15

  • 1罗福龙,易碧金,罗兰兵.地震检波器技术及应用[J].物探装备,2005,15(1):6-14. 被引量:32
  • 2王辉明,宋志翔,马国庆.MEMS加速度传感器开发及在地球物理勘探中的应用[J].勘探地球物理进展,2005,28(3):223-226. 被引量:12
  • 3唐东林,陈才和,崔宇明,王金海.三分量光弹波导混合集成加速度传感器[J].光子学报,2005,34(7):1062-1065. 被引量:4
  • 4汉泽西,李彪,邵媛,郭正虹.地震检波器发展初探[J].石油仪器,2006,20(6):1-4. 被引量:10
  • 5Andrew R. Atwell,Robert S. Okojie,Kevin T. Kornegay,Scott L. Roberson,Alain Beliveau.??Simulation, fabrication and testing of bulk micromachined 6H-SiC high- g piezoresistive accelerometers(J)Sensors & Actuators: A. Physical . 2002 (1)
  • 6George T,Okojie R S,Son K A,et al.Harsh Environment Microtechnologies for NASAand Terrestrial Applications. .
  • 7Myers, David R.,Cheng, Kan Bun,Jamshidi, Babak,Azevedo, Robert G.,Senesky, Debbie G.,Chen, Li,Mehregany, Mehran,Wijesundara, Muthu B.J.,Pisano, Albert P.Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments. Journal of Micro/ Nanolithography, MEMS, and MOEMS . 2009
  • 8Okojie R S,Atwell A R,Kornegay K T,et al.Design Considerations forBulk Micromachined 6H-SIC High-g Piezoresistive Accelerometers. Technical Digest of the 15th IEEE International Conference onMEMS . 2002
  • 9Munro R G.Material properties of a sintered alpha-SiC. J.of Physical and Chemical Reference Data . 1997
  • 10龚珊,徐晓辉,郭涛,王春水.压阻式高量程微加速度计的设计[J].弹箭与制导学报,2014,34(1):158-161. 被引量:2

共引文献13

同被引文献82

引证文献13

二级引证文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部