常压化学气相沉积法制备二维六方氮化硼

Synthesis of Two-dimensional Hexagonal Boron Nitride by Atmospheric Pressure Chemical Vapor Deposition

采用常压化学气相沉积(APCVD)法制备二维六方氮化硼的基本方法,系统探究衬底抛光处理、衬底与前驱体间距、前驱体加热温度、生长温度等对六方氮化硼生长的影响,通过优化调控生长因子,成功制备出高质量单层六方氮化硼薄膜.

Atmospheric pressure chemical vapor deposition is one of the common ways of synthesizing two - dimensional h-BN. Various growth parameters including the electropo between substrate and precursor, the precursor heating temperature lishing of metal substrate, the distance as well as the growth temperature are systematically studied to obtain a better understanding of the h-BN growth dynamics. High quality monolayer h-BN film is finally achieved through the optimized growth parameters.