金刚线切多晶硅片湿法黑硅技术研究进展

Research Progress of Wet Black-silicon Technology for Diamond Wire Sawn Polycrystalline Silicon Wafer

金刚线切多晶硅片技术能提高出片率、有效降低硅片生产成本;而湿法黑硅技术不仅能有效解决金刚线切多晶硅片表面反射问题,还能带来电池效率增益。本文研究了湿法黑硅技术的几种工艺路线、不同金属辅助催化体系、专利分布及产业化现状,指出其具有良好的产业化前景。

Technology of diamond wire sawn polycrystalline silicon wafer can improve strips yield and reduce the silicon wafer production cost effectively; the wet black-silicon technology can not only solve the surthce reflection problem of diamond wire sawn polycrystalline silicon wafer, but also bring the solar cell efficiency gain. The several process rnute of wet black-silicon technology, different metal-assisted catalytic system, patent distribtition and industrialization status are studied, and its good industrial prospect is pointed.