碳纳米管的K掺杂

K Doping of Carbon Nanotubes

对碳纳米管掺杂特性的了解是控制其价电子的关键。研究发现 :单壁碳纳米管进行K掺杂后 ,其电阻率和转折温度T (高于此温度后 ,dρ/dT的符号由负变为正 )都会变小 ;其电阻会随着掺杂浓度的升高而单调下降 ,直至饱和。文章还对半导体和金属单壁碳纳米管的K掺杂行为通过光吸收谱进行了研究 。

The understanding of doping behavior of carbon nanotubes is crucial in controlling their valence electrons. K doping of single-walled carbon nanotubes leads to an overall reduction in resistivity and in the crossover temperature T * (above T * , the sign of d ρ/ d T changes from negative to positive). The resistance of K-doped single-walled carbon nanotube mats is decreased monotonically and saturated with K doping concentration. The K doping behavior of semiconducting and metallic single-walled carbon nanotube mats has been probed by optical absorption spectroscopy. Molecular dynamics has been used to predict structures of K-doped single-walled carbon nanotubes.