摘要
本文探索在SOI基片上通过顶层Si直接与碳源反应,反向外延生长3C-SiC薄膜的工艺条件和技术。采用LPCVD技术,以CH4和H2混合气体为反应源,在SOI衬底上生长3C-SiC薄膜。采用X射线衍射分析仪、场发射扫描电子显微镜和傅里叶红外光谱来研究样品的结构和性质;并研究反应前、后样品电压-电容特性的变化。研究结果表明,通过反向外延的方法,能够在SOI基片反向外延生长得到3C-SiC薄膜,但目前的工艺条件有待进一步的改善。
This paper is to explore process conditions and technology of the reverse epitaxial growth of 3C-SiC thin film through the reaction between the top silicon of the substrate and carbon source. 3C-SiC film was grown on SOI substrate by Low Pressure Chemical Vapor Deposition(LPCVD) with CH4 and H2 gas mixture as reaction sources. Using various techniques,including X-ray diffraction(XRD),scanning electron microscope (SEM)and Fourier transform infrared(FTIR) reflectance to study the structure, properties and voltage capaci-tance characteristics of SOI and 3C-SiCOI samples, it' s found out that 3C-SiC film can be obtained through re-verse epitaxial growth method and the current process conditions need to be further improved.
出处
《光散射学报》
北大核心
2017年第2期187-190,共4页
The Journal of Light Scattering
基金
四川大学青年教师科研启动基金(2010SCU11089)
关键词
立方碳化硅
SOI
SICOI
碳化
反向外延
cubic silicon carbide
silicon-on-insulator
SiC-on-insulator
carbonization
reverse-epitaxial growthprocess