钼掺杂氧化锌薄膜的制备及其性能研究

Preparation and Properties of Mo-Doped ZnO Thin Films Prepared by Magnetron Sputtering

采用掺氧化钼(MoO_3)的氧化锌(ZnO)陶瓷靶作为溅射源材料,利用磁控溅射工艺制备了钼掺杂氧化锌(MZO)透明导电氧化物(TCO)薄膜,通过X-射线衍射仪(XRD)、光分光光度计和四探针仪进行了测试表征,研究了溅射功率对MZO薄膜结构、光学和电学性能的影响.结果表明:所沉积的MZO薄膜样品均为六角纤锌矿结构,并具有(002)择优取向生长特性,溅射功率对薄膜结构和光电性能具有不同程度的影响.当溅射功率为120 W时,MZO薄膜的可见光区平均透过率最高、电阻率最低、性能指数最大,具有最好的光电综合性能.

The transparent conductive thin films of Mo-doped ZnO （MZO） were prepared by magnetron sputtering technique using a sintered ceramic target with a mixture of MoO3 and ZnO.The influence of sputtering power on the structural, electrical and optical properties of MZO thin films was analyzed by X-ray diffraction （XRD）, four-point probe and optical transmission spectroscopy.The results indicate that all the deposited thin films have a hexagonal wurtzite structure and a （002） preferred orientation with the c-axis perpendicular to the substrate.The structural, optical and electrical properties of the thin films are closely related to the sputtering power.The MZO sample prepared at sputtering power of 120 W exhibits the best optoelectrical performance, with the highest average optical transmittance in the visible range, the lowest electrical resistivity and the maximum figure of merit.