基于25 nm FinFET结构的SRAM单粒子效应研究

Research of Single Event Upset in SRAM of 25 nm FinFET Structure

对基于25nm FinFET结构的SRAM单粒子效应进行研究。使用Synopsys Sentaurus TCAD仿真软件进行器件工艺校准,并对独立3DFinFET器件以及包含FinFET器件和HSpice模型的混合电路(如6管SRAM单元)进行单粒子瞬态仿真。通过改变重粒子入射条件,分析影响瞬态电流峰值、脉宽、漏极翻转阈值等参数的因素。研究发现,混合模型中,FinFET结构器件的漏极翻转阈值为0.023 MeV·cm2/mg,对未来基于FinFET结构的器件及电路结构的加固提出了更高的要求。

The SEU effects of SRAM based on the 25 nm FinFET structure were studied. Synopsys Sentaurus TCAD simulation software was used to calibrate the device＇s process and also to explore the single event transient effects of the 3-dimensional FinFET independent devices and the mixed circuits that included FinFET devices and HSpice models （such as six transistor SRAM element）. By changing the heavy ion incident conditions, the impacts of SET on the parameters such as transient peak current, peak current pulse width, drain turning threshold voltage were analyzed. It was found that the drain turning threshold voltage of six transistor SRAM with FinFET structure was 0. 023 MeV · cm^2/mg in the mixed model. And this result placed greater demands on the radiation hardening of device＇s and circuit＇s architecture with FinFET structure.