过渡金属离子(Mn、Cu、Fe)掺杂半导体纳米晶的研究进展

Research Progress of Transition Metal(Mn,Cu,Fe) Doped Semiconductor Nanocrystals

过渡金属掺杂量子点由于具有零自吸收、更宽的发射光谱范围、更好的光化学稳定性等优点,已经成为提高量子点光电性能的重要研究方向。本文首先简单介绍了其掺杂机制,发光原理,制备方法,然后着重介绍了Mn,Cu,Fe等过渡金属掺杂量子点的最新研究进展。通过对大量相关文献进行总结发现,量子点的量子效率以及发光特性主要受掺杂量子点的制备方法,掺杂浓度,壳层厚度等因素的影响,最后,分析了该领域中目前存在的问题,并提出了今后的研究方向。

At present,the major directions of research about improving the photoelectric properties of quantum dots are based on its advantages of zero self absorption,wider emission spectral range,better photochemical stability.Transition metal-doped quantum dots have become an important research direction to improve the photoelectric characterists of quantum dots.Firstly,the doping mechanism,luminous principle and synthetic method of transition metal-doped quantum dots were introduced simply.Then,the latest research progress of transition metal doped quantum dots was reviewed.The corresponding research progress of common transition metal ions was introduced respectively in detail,such as Mn,Cu,Fe.According to review of latest related papers,it was found that the quantum yield of quantum dots and luminescent properties mainly depended on the synthetic method,doping concentration,shell thickness and other factors of doping quantum dots.Finally,current problems in the filed were analyzed,and a few solution methods were proposed.