基于分层法模拟光学薄膜的导纳轨迹图

Admittance locus diagram simulations by stratification

采用分层法与传输矩阵法,从理论上模拟了双层减反膜、3层减反膜以及周期性多层膜的导纳轨迹图,并且分析了减反膜与具有高反射率的周期性多层膜的导纳轨迹图特性.结果表明,减反膜的导纳图终点接近于导纳轨迹图实轴上与入射介质导纳值相同的点,而周期性高反膜的导纳图终点却接近于实轴上0点或无穷大.

Stratification and transfer matrix methods were used to simulate admittance locus diagrams of optical thin films such as bi-layer antireflection film, three-layer antireflection film and periodic multilayer with high reflection. Characteristics of admittance locus diagrams were analyzed and compared. End point of admittance diagram of an anti-reflective film was found to be close to points in real axis, with a value equal to admittance of incident medium. End point of periodic muhilayer was close to zero point or infinite points on real aXiS